描述
产品简要说明
ASML 859-0929-006是ASML专为极紫外（EUV）光刻机设计的高精度光学检测传感器，核心功能包括：
纳米级光强监测：实时检测曝光能量波动，精度达±0.005%（单脉冲）。
动态反馈控制：与光刻机控制系统联动，曝光均匀性误差<0.2%。
多模态数据采集：集成光谱分析、偏振检测与温度补偿模块，适配复杂工艺需求。
产品详细说明
1.技术架构与核心功能
光学检测系统：
超快响应探测器：采用硅光电倍增管（SiPM）阵列，响应时间≤50ps，覆盖13.5nm EUV波段。
多通道数据处理：支持8路并行信号采集，采样率100MHz，动态范围10^6:1。
补偿算法：
温度自适应校准：通过热电堆传感器实时监测环境温度，补偿因热漂移导致的光强误差。
光路损耗补偿：结合ASML的Source Mask Optimization（SMO）算法，动态调整曝光能量分布。
抗干扰设计：
电磁屏蔽：三层屏蔽结构（含氮化钛涂层），抑制外部电磁干扰至<0.01V/m。
机械稳定性：气浮轴承支撑系统，振动敏感度≤0.1nm/rms（0.1Hz～1kHz）。
2.性能突破
制程兼容性：
支持3nm及以下逻辑芯片与2nm存储芯片的曝光监控需求。
能效优化：
功耗≤25W（典型值），较上代降低40%，热辐射影响减少至0.01℃/W。
故障自诊断：
内置AI算法（基于LSTM网络），可检测传感器老化与污染，误报率<0.05%。
3.行业适配性
半导体制造：
用于EUV光源能量校准、掩模版缺陷检测及晶圆曝光实时监控。
适配先进封装（如Chiplet异构集成）的微米级能量均匀性需求。
科研领域：
支持量子点阵列、纳米光子器件的高精度光强测量与分析。
技术规格:ASML 859-0929-006
参数项规格描述
检测波长13.5nm（EUV波段）
精度±0.005%（单脉冲能量波动）
响应时间≤50ps（上升沿）
采样率100MHz（8通道并行）
环境适应性温度范围：10℃～35℃，湿度≤5%RH（非凝露）
功耗≤25W（典型值）
Product brief description
ASML 859-0929-006 is a high-precision optical detection sensor designed by ASML for extreme ultraviolet(EUV)lithography machines.The core functions include:
Nano-level light intensity monitoring:detect exposure energy fluctuations in real time,with an accuracy of±0.005%(single pulse).
Dynamic feedback control:linked to the lithography machine control system,exposure uniformity error is<0.2%.
Multimodal data acquisition:Integrated spectral analysis,polarization detection and temperature compensation modules to adapt to complex process requirements.
Product details
1.Technical architecture and core functions
Optical detection system:
Ultrafast response detector:adopts silicon photomultiplier tube(SiPM)array,with a response time≤50ps,covering the 13.5nm EUV band.
Multi-channel data processing:supports 8-channel parallel signal acquisition,sampling rate 100MHz,dynamic range 10^6:1.
Compensation algorithm:
Temperature adaptive calibration:The ambient temperature is monitored in real time through the thermopile sensor to compensate for the light intensity error caused by thermal drift.
Optical path loss compensation:combined with ASML’s Source Mask Optimization(SMO)algorithm,dynamically adjust the exposure energy distribution.
Anti-interference design:
Electromagnetic shielding:three-layer shielding structure(including titanium nitride coating),inhibiting external electromagnetic interference to<0.01V/m.
Mechanical stability:air-floating bearing support system,vibration sensitivity≤0.1nm/rms(0.1Hz~1kHz).
2.Performance breakthrough
Process compatibility:
Supports exposure monitoring requirements for logic chips below 3nm and below and 2nm memory chips.
Energy efficiency optimization:
Power consumption is≤25W(typical),40%lower than the previous generation,and the influence of thermal radiation is reduced to 0.01℃/W.
Self-diagnosis of faults:
Built-in AI algorithm(based on LSTM network)can detect sensor aging and pollution,with a false alarm rate<0.05%.
3.Industry adaptability
Semiconductor manufacturing:
Used for EUV light source energy calibration,mask defect detection and wafer exposure real-time monitoring.
Adapt micron-scale energy uniformity requirements in advanced packaging such as Chiplet heterogeneous integration.
Scientific research fields:
Supports high-precision light intensity measurement and analysis of quantum dot arrays and nanophoton devices.
Technical Specifications:ASML 859-0929-006
Parameters Specification Description
Detection wavelength:13.5nm(EUV band)
Accuracy±0.005%(single pulse energy fluctuation)
Response time≤50ps(rise edge)
Sample rate:100MHz(8 channels parallel)
Environmental adaptability Temperature range:10℃～35℃,humidity≤5%RH(non-condensing)
Power consumption≤25W(typical)
