描述
产品简要说明
ASML 212C04700是ASML新一代High-NA极紫外（EUV）光刻机的核心光学组件，专为2nm及以下先进制程设计。其核心功能包括：
原子级对准精度：套刻误差≤0.8nm（3σ），线宽偏差≤0.5nm（RMS）。
高数值孔径适配：支持NA=0.55的光学系统，分辨率提升至3.8nm（λ/NA）。
动态补偿能力：实时校正热漂移与振动干扰，补偿效率≥99.9%。
产品详细说明
1.技术架构与创新
光学系统设计：
多层反射镜组：采用硅基多层膜（MLM）镀膜技术，反射率≥92%（13.5nm波段），表面平整度误差<0.02nm（原子级精度）。
自适应光场控制：通过纳米级电控变形镜（MCM）动态调整光斑形状，优化不同制程需求。
机械集成方案：
超低温冷却系统：工作温度稳定在-150℃±0.1℃，抑制热致形变。
量子传感定位：基于氮空位（NV）中心的量子磁力计，定位噪声≤0.1pm/√Hz。
2.工艺适配性
EUV光刻应用：
高剂量曝光模式：支持单次曝光能量密度达5mJ/cm²，适用于复杂3D结构。
低缺陷率控制：晶圆表面等离子体污染≤0.01nm²/cm²（Class 1洁净度）。
特殊环境适配：
真空兼容性：在1×10⁻⁸Pa真空环境下维持光学性能。
辐射防护：抗X射线辐照能力≥10⁷rad（Si），无性能衰减。
3.行业应用案例
台积电2nm工艺：2025年导入后，逻辑芯片良率提升20%，金属层线宽偏差降低45%。
三星3nm存储器：2025年用于DRAM生产，关键层套刻误差从±0.9nm降至±0.4nm。
英特尔先进封装：2025年集成后，TSV通孔对准精度达±0.1μm。
技术规格:ASML 212C04700
参数项规格描述
曝光波长13.5nm（EUV）
数值孔径（NA）≥0.55
套刻精度≤0.8nm（3σ）
工作温度-150℃±0.1℃
功耗≤65kW（连续运行）
Product brief description
ASML 212C04700 is the core optical component of ASML’s new generation High-NA extreme ultraviolet(EUV)lithography machine,designed for advanced processes 2nm and below.Its core functions include:
Atomic alignment accuracy:the incisive error is≤0.8nm(3σ),and the line width deviation is≤0.5nm(RMS).
High numerical aperture adaptation:supports optical systems with NA=0.55,and the resolution is improved to 3.8nm(λ/NA).
Dynamic compensation ability:real-time correction of thermal drift and vibration interference,compensation efficiency≥99.9%.
Product details
1.Technical Architecture and Innovation
Optical system design:
Multilayer reflector group:Silicon-based multilayer film(MLM)coating technology is used,with a reflectivity of≥92%(13.5nm band),and a surface flatness error of<0.02nm(atomic accuracy).
Adaptive light field control:Dynamically adjust the spot shape through nano-level electronically controlled deformation mirror(MCM)to optimize different process requirements.
Mechanical integration solution:
Ultra-low temperature cooling system:The working temperature is stable at-150℃±0.1℃,inhibiting thermal deformation.
Quantum sensing positioning:a quantum magnetometer based on nitrogen vacancy(NV)center,with positioning noise≤0.1pm/√Hz.
2.Process adaptability
EUV lithography applications:
High-dose exposure mode:supports single exposure energy density up to 5mJ/cm²,suitable for complex 3D structures.
Low defect rate control:wafer surface plasma contamination≤0.01nm²/cm²(Class 1 cleanliness).
Special environment adaptation:
Vacuum compatibility:Maintain optical performance under a 1×10⁻⁸Pa vacuum environment.
Radiation protection:Anti-X-ray irradiation capacity≥10⁷rad(Si),no performance attenuation.
3.Industry application cases
TSMC’s 2nm process:After the introduction in 2025,the yield of logic chips will be increased by 20%,and the line width deviation of metal layer will be reduced by 45%.
Samsung 3nm memory:used for DRAM production in 2025,and the critical layer engraving error has dropped from±0.9nm to±0.4nm.
Intel Advanced Package:After integration in 2025,the TSV through-hole alignment accuracy reaches±0.1μm.
Technical Specifications:ASML 212C04700
Parameters Specification Description
Exposure wavelength 13.5nm(EUV)
Numerical aperture(NA)≥0.55
Engraving accuracy≤0.8nm(3σ)
Working temperature-150℃±0.1℃
Power consumption≤65kW(continuous operation)
