描述
产品简要说明
6001-0303-5701 ASML是一款专为极紫外（EUV）光刻机设计的高精度运动控制核心，核心功能包括：
纳米级定位：支持X/Y/Z轴±50μm行程控制，重复定位精度≤0.1nm。
多物理量融合控制：集成激光干涉仪、压电传感器与电容位移传感器，闭环响应时间≤30μs。
抗干扰设计：通过IEC 61000-6-4工业环境认证，电磁兼容性达Class 4等级。
产品详细说明
1.技术架构与创新
异构计算架构：
多核协同处理：采用ARM Cortex-M7（主频400MHz）+Xilinx Zynq-7000 FPGA（双核ARM Cortex-A9），分别负责实时控制与复杂算法运算。
硬件加速单元：内置专用运动控制DSP，指令执行效率提升40%。
通信协议栈：
EtherCAT主站：支持动态从站配置，节点间同步误差≤50ns。
定制化协议：兼容ASML私有协议（ASML-IPC），支持光刻机工艺参数实时同步。
2.核心功能模块
纳米级运动控制：
超精密插补：支持贝塞尔曲线插补，轨迹跟踪误差≤0.005%。
动态补偿算法：集成热漂移补偿、机械耦合误差补偿（补偿精度达0.01nm）。
安全控制机制：
三重冗余设计：主控板、扩展板、安全模块独立运行，故障切换时间<2ms。
光刻机专用安全协议：支持ASML安全等级（ASML Safety Level 5），紧急制动响应时间≤25μs。
3.行业应用适配性
EUV光刻机：
晶圆台控制：驱动直线电机实现±50μm行程定位，定位抖动≤0.05nm（RMS）。
洁净室兼容性：通过ISO 14644-1 Class 1洁净室认证，微粒排放≤0.01个/m³（0.1μm）。
3D封装设备：
多轴协同控制：同步控制6自由度机械臂，装配精度≤2μm。
温度补偿：集成热敏电阻阵列，实时补偿环境温度变化（补偿范围-5℃至5℃）。
Product brief description
6001-0303-5701 ASML is a high-precision motion control core designed for extreme ultraviolet(EUV)lithography machines.The core functions include:
Nano-level positioning:supports X/Y/Z axis±50μm stroke control,and repeat positioning accuracy≤0.1nm.
Multi-physical quantity fusion control:Integrated laser interferometer,piezoelectric sensor and capacitive displacement sensor,closed-loop response time≤30μs.
Anti-interference design:passed IEC 61000-6-4 industrial environment certification,and the electromagnetic compatibility reaches Class 4 level.
Product details
1.Technical Architecture and Innovation
Heterogeneous computing architecture:
Multi-core collaborative processing:ARM Cortex-M7(main frequency 400MHz)+Xilinx Zynq-7000 FPGA(dual-core ARM Cortex-A9)is used to be responsible for real-time control and complex algorithm operations respectively.
Hardware acceleration unit:built-in dedicated motion control DSP,and the command execution efficiency is improved by 40%.
Communication protocol stack:
EtherCAT master:supports dynamic slave configuration,and the synchronization error between nodes is≤50ns.
Customized protocol:compatible with ASML private protocol(ASML-IPC),supports real-time synchronization of lithography machine process parameters.
2.Core functional modules
Nano-scale motion control:
Ultra-precision interpolation:supports Bezier curve interpolation,and the tracking error is≤0.005%.
Dynamic compensation algorithm:integrated thermal drift compensation,mechanical coupling error compensation(compensation accuracy up to 0.01nm).
Safety control mechanism:
Triple redundant design:main control board,expansion board,and security module operate independently,failover time<2ms.
Special safety protocol for lithography machines:supports ASML safety level(ASML Safety Level 5),emergency braking response time≤25μs.
3.Industry application adaptability
EUV lithography machine:
Wafer control:Drive linear motor to achieve±50μm stroke positioning,positioning jitter≤0.05nm(RMS).
Clean room compatibility:Passed ISO 14644-1 Class 1 clean room certification,particle emissions≤0.01 pieces/m³(0.1μm).
3D packaging equipment:
Multi-axis collaborative control:synchronously controls the 6-degree of freedom robotic arm,assembly accuracy≤2μm.
Temperature compensation:Integrated thermistor array,compensates for ambient temperature changes in real time(compensation range-5℃to 5℃).
