描述
产品简要说明
ASML 879-8234-007是一款专为浸润式光刻机设计的光学系统核心组件，核心功能包括：
高精度滤波调控：支持光学透镜组波前畸变补偿精度≤0.05λ（ 633nm），光谱滤波带宽稳定性达±0.2nm。
多光谱兼容性：集成紫外（UV）、深紫外（DUV）及极紫外（EUV）三波段滤波模块，光谱响应范围193nm-13.5nm。
抗污染设计：通过ASML洁净度认证（Class 0），表面颗粒物控制≤10^9 atoms/cm²。
产品详细说明
1.技术架构与创新
模块化光学设计：
复合滤波结构：采用熔融石英基底+多层膜堆叠技术，透光率≥98%（ 193nm）。
动态补偿机制：内置压电陶瓷驱动器（分辨率0.1nm），波前畸变补偿响应时间<100μs。
通信协议栈：
EtherCAT从站：支持ASML工艺参数库实时加载（兼容800+光刻工艺包）。
ASML私有协议：实现滤波参数与光刻机曝光剂量的动态同步。
2.核心功能模块
多光谱滤波：
波长选择性：支持EUV（13.5nm）、ArF（193nm）、KrF（248nm）三波段切换，切换时间<50ms。
光谱稳定性：通过激光外差干涉仪监测，带宽漂移≤0.05nm/小时。
环境自适应：
温度补偿：集成热敏电阻阵列，环境温度波动补偿精度达±0.01℃。
真空兼容性：支持10^-6 Torr真空环境运行，机械变形量≤0.1nm。
3.行业应用适配性
浸润式光刻机：
光学路径优化：实现浸润液（如水）折射率匹配误差≤0.001，曝光均匀性提升15%。
高能光束管理：支持EUV光刻机250W激光功率传输，能量损耗≤0.5%。
精密光学系统：
多光束干涉：兼容激光干涉仪校准，相位噪声控制≤10^-3 rad。
抗激光损伤：通过ASML激光损伤阈值测试（LIDT≥5J/cm² 13.5nm）。
技术规格:ASML 879-8234-007
参数项规格描述
光谱范围13.5nm（EUV）/193nm（ArF）/248nm（KrF）
透光率≥98%（ 193nm），≥95%（ 13.5nm）
波前畸变≤0.05λ（RMS）
工作温度20℃±0.1℃（恒温控制模式）
功耗≤30W（连续运行）
Product brief description
ASML 879-8234-007 is an optical system core component designed for immersive lithography machines.The core functions include:
High-precision filtering regulation:supports wavefront distortion compensation accuracy of optical lens group≤0.05λ( 633nm),and the spectral filter bandwidth stability reaches±0.2nm.
Multi-spectral compatibility:Integrated ultraviolet(UV),deep ultraviolet(DUV)and extreme ultraviolet(EUV)three-band filter modules,with a spectral response range of 193nm-13.5nm.
Anti-pollution design:Passed ASML cleanliness certification(Class 0),surface particulate matter control≤10^9 atoms/cm².
Product details
1.Technical Architecture and Innovation
Modular optical design:
Composite filter structure:adopts fused quartz substrate+multi-layer film stacking technology,with a light transmittance of≥98%( 193nm).
Dynamic compensation mechanism:built-in piezoelectric ceramic driver(resolution 0.1nm),wavefront distortion compensation response time<100μs.
Communication protocol stack:
EtherCAT slave:supports real-time loading of ASML process parameter library(compatible with 800+lithography process packages).
ASML private protocol:realizes dynamic synchronization of filter parameters and exposure dose of lithography machine.
2.Core functional modules
Multispectral filtering:
Wavelength selectivity:Supports three-band switching between EUV(13.5nm),ArF(193nm),and KrF(248nm),with a switching time<50ms.
Spectral stability:Monitored by laser heterodyne interferometer,bandwidth drift≤0.05nm/hour.
Environmental adaptation:
Temperature compensation:Integrated thermistor array,the ambient temperature fluctuation compensation accuracy reaches±0.01℃.
Vacuum compatibility:Supports operation in 10^-6 Torr vacuum environment,mechanical deformation amount≤0.1nm.
3.Industry application adaptability
Immersive lithography machine:
Optical path optimization:Achieves the refractive index matching error of the wetted liquid(such as water)with an≤0.001,and an exposure uniformity is improved by 15%.
High-energy beam management:supports 250W laser power transmission of EUV lithography machine,energy loss is≤0.5%.
Precision optical system:
Multi-beam interference:compatible with laser interferometer calibration,phase noise control≤10^-3 rad.
Anti-laser damage:Passed the ASML laser damage threshold test(LIDT≥5J/cm² 13.5nm).
Technical Specifications:ASML 879-8234-007
Parameters Specification Description
Spectral range 13.5nm(EUV)/193nm(ArF)/248nm(KrF)
Light transmittance≥98%( 193nm),≥95%( 13.5nm)
Wavefront distortion≤0.05λ(RMS)
Operating temperature:20℃±0.1℃(constant temperature control mode)
Power consumption≤30W(continuous operation)
