描述
产品简要说明
ASML 4022.423.1786是ASML专为下一代高数值孔径（High NA）极紫外（EUV）光刻机设计的动态校正模块，核心特性包括：
亚埃级对准精度：采用自适应光学（AO）与机器学习算法，图形对准误差≤0.1nm RMS。
多维度环境补偿：支持温度漂移（<0.01nm/℃）、振动干扰（<1nm RMS）及辐射损伤的实时补偿。
极端环境适配性：耐受真空环境（<1e-8 mbar）与高温辐射（局部耐受1200℃），材料应力变化≤0.003%。
产品详细说明
1.技术架构与核心功能
动态校正系统：
集成多模态波前传感器（Zernike多项式分解精度≤0.005λ）与变形镜（DM）阵列，实现闭环实时校正，响应时间<2ms。
深度学习驱动的预测补偿模型，可预判环境扰动对光场的影响，补偿效率提升40%。
环境自适应设计：
超低温冷却系统（液氦循环，温度波动≤±0.01℃）与磁悬浮支撑结构（振动隔离效率≥99.99%）。
碳化硅基板与氮化铝涂层，抗热膨胀系数≤0.2ppm/℃。
智能控制单元：
基于FPGA的实时数据处理模块，支持PCIe Gen5×32高速接口与光刻机主控系统同步。
自动标定算法，全参数校准时间≤12小时。
2.性能突破
图形对准精度：
多层叠加曝光（MLA）场景下，对准误差≤0.3nm（3nm制程），良率提升至96%。
能效优化：
热管理能耗降低50%，系统功耗≤150W（全功率模式）。
跨代兼容性：
支持ASML NXE:4500（NA=0.55）至未来NA=0.75机型，预留光场扩展接口。
技术规格:ASML 4022.423.1786
参数项规格描述
工作波长13.5nm（EUV）
校正精度图形对准误差≤0.1nm RMS
环境适应性真空耐受<1e-8 mbar，高温耐受1200℃（局部）
响应时间动态补偿响应<2ms
接口类型PCIe Gen5×32（控制接口）+FC/PC光纤（光信号接口）
功耗≤150W（运行模式）
Product brief description
ASML 4022.423.1786 is a dynamic correction module designed by ASML for the next generation of high numerical aperture(High NA)extreme ultraviolet(EUV)lithography machines.The core features include:
Subangia-level alignment accuracy:Adaptive optics(AO)and machine learning algorithms are used,and the graph alignment error is≤0.1nm RMS.
Multi-dimensional environmental compensation:supports real-time compensation for temperature drift(<0.01nm/℃),vibration interference(<1nm RMS)and radiation damage.
Extreme environmental adaptability:tolerate vacuum environment(<1e-8 mbar)and high temperature radiation(locally to 1200℃),material stress change≤0.003%.
Product details
1.Technical architecture and core functions
Dynamic correction system:
Integrated multimodal wavefront sensor(Zernike polynomial decomposition accuracy≤0.005λ)and deforming mirror(DM)array to achieve closed-loop real-time correction and response time<2ms.
Deep learning-driven predictive compensation model can predict the impact of environmental disturbances on the light field,and the compensation efficiency is improved by 40%.
Environmental adaptive design:
Ultra-low temperature cooling system(liquid helium circulation,temperature fluctuation≤±0.01℃)and magnetic levitation support structure(vibration isolation efficiency≥99.99%).
Silicon carbide substrate and aluminum nitride coating have thermal expansion resistance coefficient≤0.2ppm/℃.
Intelligent control unit:
The real-time data processing module based on FPGA supports synchronization of PCIe Gen5×32 high-speed interface with the lithography machine main control system.
Automatic calibration algorithm,full parameters calibration time≤12 hours.
2.Performance breakthrough
Graphic alignment accuracy:
In the multi-layer superimposed exposure(MLA)scenario,the alignment error is≤0.3nm(3nm process),and the yield is increased to 96%.
Energy efficiency optimization:
Thermal management energy consumption is reduced by 50%,and the system power consumption is≤150W(full power mode).
Cross-generation compatibility:
Supports ASML NXE:4500(NA=0.55)to future NA=0.75 models,and reserves light field expansion interface.
Technical specifications:ASML 4022.423.1786
Parameters Specification Description
Operating wavelength:13.5nm(EUV)
Correction accuracy Graphic alignment error≤0.1nm RMS
Environmental adaptability Vacuum tolerance<1e-8 mbar,high temperature tolerance 1200℃(local)
Response time Dynamic compensation response<2ms
Interface type PCIe Gen5×32(control interface)+FC/PC optical fiber(optical signal interface)
Power consumption≤150W(operating mode)
