ASML 4022.430.0090. ASML

产品简要说明

ASML 4022.430.0090是ASML专为极紫外(EUV)光刻机设计的高能光源模块,核心特性包括:

亚13.5nm波长输出:采用多层反射镜技术,单脉冲能量≥5mJ,支持7nm以下制程需求。

超高稳定性:光束漂移≤0.1μm(3σ),长期功率波动≤0.5%。

紧凑化设计:体积缩小30%,适配光刻机紧凑型光学架构。

产品详细说明

1.技术架构与核心功能

多层反射镜系统:

采用钼/硅(Mo/Si)多层镀膜技术,反射率≥68%( 13.5nm),能量转换效率提升至行业领先水平。

镜面曲率半径误差≤0.1nm,通过纳米级金刚石车削工艺实现。

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描述

产品简要说明

ASML 4022.430.0090是ASML专为极紫外(EUV)光刻机设计的高能光源模块,核心特性包括:

亚13.5nm波长输出:采用多层反射镜技术,单脉冲能量≥5mJ,支持7nm以下制程需求。

超高稳定性:光束漂移≤0.1μm(3σ),长期功率波动≤0.5%。

紧凑化设计:体积缩小30%,适配光刻机紧凑型光学架构。

产品详细说明

1.技术架构与核心功能

多层反射镜系统:

采用钼/硅(Mo/Si)多层镀膜技术,反射率≥68%( 13.5nm),能量转换效率提升至行业领先水平。

镜面曲率半径误差≤0.1nm,通过纳米级金刚石车削工艺实现。

激光驱动机制:

1064nm固体激光器激发锡原子,产生等离子体并释放EUV光子,脉冲频率≥5kHz。

集成自适应相位调制器,光束发散角控制至≤0.2mrad。

热管理模块:

液氦冷却系统维持反射镜温度≤-196℃,抑制热变形导致的光束偏移。

闭环温控精度±0.01℃,确保长期稳定性。

2.性能突破

能量密度优化:

光束直径≤2.5mm,能量密度≥100mJ/cm²,支持单次曝光晶圆面积提升20%。

抗污染设计:

镀膜层耐受锡蒸气侵蚀,维护周期延长至传统系统的3倍。

低功耗运行:

整体功耗≤120kW,较上一代产品降低15%。

技术规格:ASML 4022.430.0090

参数项规格描述

中心波长13.5nm(±0.05nm)

单脉冲能量≥5mJ(典型值)

光束漂移≤0.1μm(3σ)

环境耐受性工作温度-196℃~+40℃,真空度<1e-7 mbar

核心价值与性能亮点

1.EUV制程突破

7nm以下制程适配:通过高能量密度与精准光束控制,实现逻辑芯片与存储芯片的纳米级图案化。

良率提升:光束稳定性优化使曝光均匀性误差≤0.5%,晶圆良率提升至95%以上。

2.工业级可靠性

长寿命设计:多层镀膜抗污染技术,维护周期延长至8000小时。

故障自恢复:激光驱动系统内置冗余模块,单点故障不影响整体运行。

3.生态协同优化

ASML光刻机适配:专为NXE系列光刻机设计,兼容其光学路径与控制系统(ASML Light Source Interface)。

跨代兼容:支持未来5nm制程升级所需的光束参数调整。

Product brief description

ASML 4022.430.0090 is a high-energy light source module designed by ASML for extreme ultraviolet(EUV)lithography machines.The core features include:

Sub-13.5nm wavelength output:adopts multi-layer mirror technology,single pulse energy≥5mJ,and supports process requirements below 7nm.

Ultra-high stability:beam drift≤0.1μm(3σ),long-term power fluctuation≤0.5%.

Compact design:30%smaller in size,suitable for the compact optical architecture of lithography machine.

Product details

1.Technical architecture and core functions

Multilayer reflector system:

Molybdenum/silicon(Mo/Si)multi-layer coating technology is adopted,with a reflectivity of≥68%( 13.5nm),and the energy conversion efficiency is improved to the industry-leading level.

The mirror surface curvature radius error is≤0.1nm,and is achieved through nano-level diamond turning technology.

Laser drive mechanism:

The 1064nm solid laser excites tin atoms,generates plasma and releases EUV photons,with a pulse frequency of≥5kHz.

Integrated adaptive phase modulator,the beam divergence angle is controlled to≤0.2mrad.

Thermal management module:

The liquid helium cooling system maintains the reflector temperature≤-196℃to suppress beam deviation caused by thermal deformation.

Closed-loop temperature control accuracy±0.01℃to ensure long-term stability.

2.Performance breakthrough

Energy density optimization:

The beam diameter is≤2.5mm,the energy density is≥100mJ/cm²,and the wafer area is increased by 20%.

Anti-pollution design:

The coating layer is resistant to tin vapor erosion and the maintenance cycle is extended to three times that of traditional systems.

Low power operation:

The overall power consumption is≤120kW,a 15%reduction compared to the previous generation of products.

Technical specifications:ASML 4022.430.0090

Parameters Specification Description

Center wavelength 13.5nm(±0.05nm)

Single pulse energy≥5mJ(typical)

Beam drift≤0.1μm(3σ)

Environmental tolerance Operating temperature-196℃~+40℃,vacuum degree<1e-7 mbar

Core Values​​and Performance Highlights

1.EUV process breakthrough

Process adaptation below 7nm:through high energy density and precise beam control,nano-scale patterning of logic chips and memory chips are realized.

Yield improvement:Beam stability optimization makes exposure uniformity error≤0.5%,and wafer yield increases to more than 95%.

2.Industrial-grade reliability

Long life design:multi-layer coating anti-pollution technology,extended maintenance cycle to 8000 hours.

Self-recovery of faults:The laser drive system has built-in redundant modules,and a single point of failure does not affect the overall operation.

3.Ecological collaborative optimization

ASML lithography machine adaptation:specially designed for NXE series lithography machines,compatible with its optical path and control system(ASML Light Source Interface).

Cross-generation compatibility:supports beam parameter adjustment required for future 5nm process upgrades.