ASML 4022.435.3411 3B

基于机器学习的波前预测模型,提前补偿机械形变误差(预测准确率≥99%)。

多目标优化算法,平衡光束稳定性与能量利用率(能量损耗≤3%)。

2.性能突破

极端环境适应性:

真空环境(<1e-7 mbar)下光束传输损耗≤0.05%/米。

超低温(-196℃)下材料热膨胀系数(CTE)≤0.05ppm/℃。

抗干扰能力:

电磁屏蔽等级EMI≥80dB,射频干扰(RFI)抑制比≥20dB。

长寿命设计:

变形镜疲劳寿命≥1e10次循环,冷却系统效率≥95%。

技术规格:ASML 4022.435.3411 3B

参数项规格描述

波前畸变补偿RMS≤0.03λ( 13.5nm波长)

光束发散角≤0.3mrad(全角)

热稳定性温控精度≤0.005℃,热漂移补偿效率≥98%

振动抑制有效频段1-1000Hz,隔振效率≥95%

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描述

产品简要说明

ASML 4022.435.3411 3B是ASML为EUV光刻机设计的高精度光束调整模块,核心特性包括:

波前畸变补偿:动态校正光束相位误差(RMS≤0.03λ),支持自适应算法实时修正。

多物理场协同控制:集成热形变补偿、振动抑制与电磁干扰屏蔽(EMI≥70dB)。

高稳定性输出:光束发散角≤0.3mrad,功率波动≤0.2%(RMS)。

产品详细说明

1.技术架构与核心功能

动态波前校正系统:

自适应光学元件:采用变形镜(DM)与压电陶瓷驱动,曲率调整精度≤0.01nm。

相位传感器:基于波前传感器(Shack-Hartmann)的实时检测,采样频率≥1kHz。

多物理场控制模块:

热管理:液氦冷却系统实现透镜温度波动≤0.005℃,热漂移补偿效率≥98%。

振动抑制:主动隔振平台(AVI)降低外部振动干扰至≤0.01nm/μm/s²。

智能算法集成:

基于机器学习的波前预测模型,提前补偿机械形变误差(预测准确率≥99%)。

多目标优化算法,平衡光束稳定性与能量利用率(能量损耗≤3%)。

2.性能突破

极端环境适应性:

真空环境(<1e-7 mbar)下光束传输损耗≤0.05%/米。

超低温(-196℃)下材料热膨胀系数(CTE)≤0.05ppm/℃。

抗干扰能力:

电磁屏蔽等级EMI≥80dB,射频干扰(RFI)抑制比≥20dB。

长寿命设计:

变形镜疲劳寿命≥1e10次循环,冷却系统效率≥95%。

技术规格:ASML 4022.435.3411 3B

参数项规格描述

波前畸变补偿RMS≤0.03λ( 13.5nm波长)

光束发散角≤0.3mrad(全角)

热稳定性温控精度≤0.005℃,热漂移补偿效率≥98%

振动抑制有效频段1-1000Hz,隔振效率≥95%

核心价值与性能亮点

1.先进制程适配

3nm以下制程支持:通过动态波前校正,单次曝光分辨率提升至≤3nm(half-pitch)。

多层堆叠兼容:支持3D NAND闪存的128层堆叠工艺,层间对准误差≤0.02nm。

2.工业级可靠性

故障预测系统:基于振动频谱分析的机械部件寿命预测,剩余寿命预警误差≤5%。

冗余设计:双波前传感器备份,切换时间≤50ms。

3.生态协同创新

ASML NXE 3600D适配:专为7nm EUV光刻机设计,兼容其新型光学接口(OI 4.0)。

未来升级预留:支持数值孔径(NA)≥0.55的扩展接口。

Product brief description

ASML 4022.435.3411 3B is a high-precision beam adjustment module designed by ASML for EUV lithography machines.The core features include:

Wavefront distortion compensation:dynamically corrects the beam phase error(RMS≤0.03λ),supports real-time correction of adaptive algorithms.

Multi-physics coordinated control:integrated thermal deformation compensation,vibration suppression and electromagnetic interference shielding(EMI≥70dB).

High stability output:beam divergence angle≤0.3mrad,power fluctuation≤0.2%(RMS).

Product details

1.Technical architecture and core functions

Dynamic wavefront correction system:

Adaptive optical components:Deformation mirror(DM)and piezoelectric ceramic drive,with curvature adjustment accuracy≤0.01nm.

Phase sensor:Based on real-time detection of wavefront sensor(Shack-Hartmann),the sampling frequency is≥1kHz.

Multi-physics control module:

Thermal management:The liquid helium cooling system achieves lens temperature fluctuations of≤0.005℃,and the thermal drift compensation efficiency is≥98%.

Vibration suppression:Active vibration isolation platform(AVI)reduces external vibration interference to≤0.01nm/μm/s².

Intelligent algorithm integration:

The wavefront prediction model based on machine learning is compensated for mechanical deformation error in advance(prediction accuracy is≥99%).

Multi-objective optimization algorithm,balancing beam stability and energy utilization(energy loss≤3%).

2.Performance breakthrough

Extreme environmental adaptability:

The beam transmission loss under vacuum environment(<1e-7 mbar)is≤0.05%/meter.

The thermal expansion coefficient(CTE)of the material at ultra-low temperature(-196℃)is≤0.05ppm/℃.

Anti-interference ability:

The electromagnetic shielding level EMI is≥80dB,and the radio frequency interference(RFI)suppression ratio is≥20dB.

Long life design:

The fatigue life of the deforming mirror is≥1e10 cycles,and the cooling system efficiency is≥95%.

Technical Specifications:ASML 4022.435.3411 3B

Parameters Specification Description

Wavefront distortion compensation RMS≤0.03λ( 13.5nm wavelength)

Beam divergence angle≤0.3mrad(full angle)

Thermal stability Temperature control accuracy≤0.005℃,thermal drift compensation efficiency≥98%

Vibration suppression Effective frequency band 1-1000Hz,vibration isolation efficiency≥95%

Core Values​​and Performance Highlights

1.Advanced process adaptation

The following 3nm process supports:through dynamic wavefront correction,the single exposure resolution is increased to≤3nm(half-pitch).

Multi-layer stacking compatibility:Supports 128-layer stacking process of 3D NAND flash memory,with an inter-layer alignment error of≤0.02nm.

2.Industrial-grade reliability

Fault prediction system:mechanical component life prediction based on vibration spectrum analysis,residual life warning error≤5%.

Redundant design:dual wavefront sensor backup,switching time≤50ms.

3.Ecological collaborative innovation

ASML NXE 3600D adaptation:designed for 7nm EUV lithography machines,compatible with its new optical interface(OI 4.0).

Future upgrade reservation:Supports extended interfaces with numerical aperture(NA)≥0.55.