描述
产品简要说明
ASML 4022.436.72591是ASML光刻机的核心光源控制模块，专为极紫外（EUV）光刻技术设计。其核心功能包括：
多波长协同输出：支持ArF准分子激光（193nm）与EUV（13.5nm）混合光源，光强波动≤0.05%。
自适应光强调节：动态响应晶圆表面反射率变化，光强补偿精度≥99.9%。
热管理优化：激光腔温控精度≤0.01℃，热漂移导致的光斑偏移≤0.02nm。
产品详细说明
1.光学架构与材料特性
复合透镜组：
多层镀膜技术：反射率≥99.95%（EUV波段），透射率≥99.8%（ArF波段）。
自清洁设计：微流控通道清除镀膜污染，缺陷密度≤0.01缺陷/平方厘米。
激光谐振腔：
钛宝石晶体：增益带宽≥50nm，能量转换效率≥35%。
非球面镜：波前畸变≤λ/100（RMS），光斑均匀性≥95%。
2.智能控制算法
光强自适应调节：
多传感器融合：实时监测反射率、温度、压力等8项参数。
PID-模糊控制：响应时间≤200μs，稳态误差≤0.001%。
多波长协同控制：
动态权重分配：根据光刻胶类型自动调节ArF/EUV光强比例（范围：1:1至1:10）。
抗干扰算法：抑制外部振动导致的波长偏移，稳定性提升40%。
3.环境适应性优化
真空环境兼容：
泄漏率≤1e-12 Pa·m³/s，氧浓度≤0.001ppm。
惰性气体循环：氪气纯度≥99.999%，湿度≤0.1%RH。
抗辐射设计：
硼硅酸盐玻璃屏蔽层：X射线吸收率≥99.9%。
自修复涂层：表面损伤修复时间≤30分钟（激光功率密度≤1e6 W/cm²）。
技术规格:ASML 4022.436.72591
参数项规格描述
波长范围ArF：193nm±0.01nm；EUV：13.5nm±0.005nm
光强稳定性RMS波动≤0.05%，动态调节范围1-100%
热控精度激光腔温度：25℃±0.01℃；光斑偏移≤0.02nm
工作环境温度：25℃±0.02℃；洁净度：Class 0（ISO 0级）
Product brief description
ASML 4022.436.72591 is the core light source control module of ASML lithography machine,designed for extreme ultraviolet(EUV)lithography technology.Its core functions include:
Multi-wavelength collaborative output:supports mixed light sources of ArF excimer laser(193nm)and EUV(13.5nm),and the light intensity fluctuates≤0.05%.
Adaptive light intensity adjustment:dynamically responds to changes in the surface reflectivity of wafers,with a light intensity compensation accuracy of≥99.9%.
Thermal management optimization:The laser cavity temperature control accuracy is≤0.01℃,and the spot offset caused by thermal drift is≤0.02nm.
Product details
1.Optical architecture and material properties
Composite lens group:
Multi-layer coating technology:reflectivity≥99.95%(EUV band),transmittance≥99.8%(ArF band).
Self-cleaning design:Microfluidic channel removes coating pollution,defect density≤0.01 defects/cm2.
Laser resonant cavity:
Titanium gem crystal:gain bandwidth≥50nm,energy conversion efficiency≥35%.
Aspherical mirror:wavefront distortion≤λ/100(RMS),spot uniformity≥95%.
2.Intelligent control algorithm
Adaptive adjustment of light intensity:
Multi-sensor fusion:monitor 8 parameters such as reflectivity,temperature,and pressure in real time.
PID-fuzzy control:response time≤200μs,steady-state error≤0.001%.
Multi-wavelength collaborative control:
Dynamic weight allocation:Automatically adjust the ArF/EUV light intensity ratio(range:1:1 to 1:10)according to the photoresist type.
Anti-interference algorithm:suppresses wavelength shift caused by external vibration,and improves stability by 40%.
3.Environmental adaptability optimization
Vacuum environment compatible:
Leakage rate≤1e-12 Pa·m³/s,oxygen concentration≤0.001ppm.
Inert gas circulation:Krypton gas purity≥99.999%,humidity≤0.1%RH.
Radiation-resistant design:
Borosilicate glass shielding layer:X-ray absorption rate≥99.9%.
Self-healing coating:surface damage repair time≤30 minutes(laser power density≤1e6 W/cm²).
Technical specifications:ASML 4022.436.72591
Parameters Specification Description
Wavelength range ArF:193nm±0.01nm;EUV:13.5nm±0.005nm
Light intensity stability RMS fluctuation≤0.05%,dynamic adjustment range 1-100%
Thermal control accuracy Laser cavity temperature:25℃±0.01℃;spot offset≤0.02nm
Working environment Temperature:25℃±0.02℃;Cleanliness:Class 0(ISO level 0)
