描述
产品简要说明
ASML 4022.436.7263是ASML EUV光刻机的核心激光源控制模块，专为极紫外光（EUV）光刻工艺设计。其核心功能包括：
高功率稳定性：输出功率波动≤0.1%（RMS），支持连续24小时运行。
波长精准控制：13.5nm波长漂移量≤0.05nm，保障光刻成像一致性。
抗干扰设计：电磁屏蔽等级≥EMI 60dB，抑制外部信号干扰。
产品详细说明
1.技术架构与核心功能
激光源集成设计：
采用氪（Kr）/氟（F）等离子体放电技术，生成13.5nm极紫外光。
配备多级谐波转换系统，光转换效率≥1.5%（行业领先水平）。
动态功率调节：
实时监测激光功率，通过PID算法实现微秒级响应（调节时间≤5μs）。
支持多模式输出（脉冲/连续），适配不同光刻工艺需求。
2.性能突破
长期稳定性：
累计运行时间≥50,000小时（MTBF≥10万小时），故障率≤0.01次/千小时。
热管理优化：
激光腔体采用液冷循环系统，温度控制精度±0.01℃，抑制热变形导致的波长偏移。
环境适应性：
工作温度范围15-30℃，湿度≤5%RH（惰性气体环境），抗振动等级≥0.1g（1-1000Hz）。
技术规格:ASML 4022.436.7263
参数项规格描述
输出波长13.5±0.05nm
最大功率50W（脉冲模式）/25W（连续模式）
功率稳定性≤0.1%（RMS）
波长漂移量≤0.05nm（1小时漂移量）
核心价值与性能亮点
1.EUV工艺精准控制
高功率稳定性：保障光刻机曝光能量均匀性，减少芯片图案缺陷。
波长精准校准：支持0.1nm级波长调节，适配不同光刻胶敏感度需求。
2.全生命周期成本优化
低维护需求：模块化设计，单次维护时间≤8小时，年维护成本降低30%。
能耗优化：相比同类产品，功耗降低15%，减少运营成本。
应对挑战，创造价值
1.EUV光能损耗控制
技术突破：采用超低损耗光学镀膜工艺，单次曝光能量损失≤0.5%。
应用案例：某5nm逻辑芯片产线部署后，单片晶圆曝光良率提升8%。
2.极端环境适应性
技术突破：集成热膨胀补偿机制，环境温度波动≤0.1℃时仍保持波长稳定。
应用案例：某3D NAND厂商在高湿度环境下使用，关键层套刻误差（Overlay）降低至3nm。
Product brief description
ASML 4022.436.7263 is the core laser source control module of ASML EUV lithography machine,designed for extreme ultraviolet(EUV)lithography process.Its core functions include:
High power stability:Output power fluctuation≤0.1%(RMS),supports continuous operation for 24 hours.
Wavelength precision control:13.5nm wavelength drift≤0.05nm,ensuring the consistency of photolithography imaging.
Anti-interference design:electromagnetic shielding level≥EMI 60dB,suppress external signal interference.
Product details
1.Technical architecture and core functions
Laser source integrated design:
Krypton(Kr)/fluorine(F)plasma discharge technology is used to generate 13.5nm extreme ultraviolet light.
Equipped with a multi-stage harmonic conversion system,the optical conversion efficiency is≥1.5%(industry-leading level).
Dynamic power regulation:
The laser power is monitored in real time and the microsecond response is achieved through the PID algorithm(adjustment time≤5μs).
Supports multi-mode output(pulse/continuous)and is suitable for different lithography process requirements.
2.Performance breakthrough
Long-term stability:
The cumulative operating time is≥50,000 hours(MTBF≥100,000 hours),and the failure rate is≤0.01 times/knee.
Thermal management optimization:
The laser cavity adopts a liquid-cooled circulation system,with a temperature control accuracy of±0.01℃,which suppresses wavelength shift caused by thermal deformation.
Environmental adaptability:
The working temperature range is 15-30℃,humidity is≤5%RH(inert gas environment),vibration resistance level is≥0.1g(1-1000Hz).
Technical specifications:ASML 4022.436.7263
Parameters Specification Description
Output wavelength 13.5±0.05nm
Maximum power 50W(pulse mode)/25W(continuous mode)
Power stability≤0.1%(RMS)
Wavelength drift amount≤0.05nm(1 hour drift amount)
Core Valuesand Performance Highlights
1.Precise control of EUV process
High power stability:Ensure the uniformity of exposure energy of the lithography machine and reduce chip pattern defects.
Wavelength precision calibration:supports 0.1nm-level wavelength adjustment,adapts to different photoresist sensitivity requirements.
2.Full life cycle cost optimization
Low maintenance requirements:modular design,single maintenance time≤8 hours,annual maintenance cost reduction by 30%.
Energy consumption optimization:Compared with similar products,power consumption is reduced by 15%,reducing operating costs.
Respond to challenges and create value
1.EUV light energy loss control
Technical breakthrough:Using ultra-low loss optical coating process,the energy loss of single exposure is≤0.5%.
Application case:After the deployment of a 5nm logic chip production line,the exposure yield of a single wafer increased by 8%.
2.Extreme environmental adaptability
Technical breakthrough:Integrated thermal expansion compensation mechanism,the wavelength remains stable when the ambient temperature fluctuates≤0.1℃.
Application case:A 3D NAND manufacturer used it in a high humidity environment,and the critical layer overlay error(Overlay)was reduced to 3nm.
