描述
产品简要说明
ASML 4022.436.72642是ASML极紫外（EUV）光刻机的核心晶圆传输组件，专为3nm及以下先进制程设计。其核心功能包括：
亚微米级定位精度：晶圆对准误差≤0.5μm（RMS），表面颗粒污染≤0.1μm（Class 1标准）。
超高速传输：单晶圆处理周期<8秒，产能提升30%。
真空兼容性：在1×10⁻⁶Pa真空环境下稳定运行，无油润滑设计。
产品详细说明
1.技术架构与创新
机械臂结构：
碳纤维复合材料：重量减轻40%，惯性矩<0.1 kg·m²。
冗余驱动系统：6自由度（X/Y/Z/θx/θy/θz）协同控制，动态响应时间<5ms。
传感与控制：
光纤激光干涉仪：分辨率≤0.1pm，抗环境振动干扰比≥60dB。
AI驱动补偿：基于机器学习的热形变预测模型，补偿精度≥99.5%。
2.工艺适配性
EUV光刻应用：
多工件台协同：支持双晶圆台交替传输，减少曝光等待时间25%。
洁净室集成：模块化设计，单次维护耗时<6小时。
特殊环境适配：
辐射耐受：可承受EUV光子流密度≥10¹⁴photons/cm²·s，表面损伤阈值>10¹⁶photons/cm²。
低温环境：在-20℃～80℃温度范围内保持定位精度。
3.行业应用案例
台积电3nm工艺：2023年导入后，晶圆产能提升20%，良率波动幅度从±2%降至±0.8%。
三星GAA晶体管制造：2024年用于逻辑芯片生产，关键层对准误差从±1.2μm降至±0.6μm。
英特尔封装技术：2025年集成后，TSV通孔良率提升18%。
技术规格:ASML 4022.436.72642
参数项规格描述
运动范围X/Y轴±200mm，Z轴±50mm
定位精度≤0.5μm（RMS）
传输速度水平移动≥600mm/s，垂直移动≥150mm/s
负载能力单晶圆承载≥100kg（含防护罩）
Product brief description
ASML 4022.436.72642 is the core wafer transmission component of ASML extreme ultraviolet(EUV)lithography machine,designed for advanced processes under 3nm and below.Its core functions include:
Submicron-level positioning accuracy:wafer alignment error≤0.5μm(RMS),surface particle contamination≤0.1μm(Class 1 standard).
Ultra-high speed transmission:single wafer processing cycle<8 seconds,production capacity increased by 30%.
Vacuum compatibility:Stable operation in 1×10⁻⁶Pa vacuum environment,oil-free lubricating design.
Product details
1.Technical Architecture and Innovation
Mechanical arm structure:
Carbon fiber composite material:40%weight reduction,moment of inertia<0.1 kg·m².
Redundant drive system:6 degrees of freedom(X/Y/Z/θx/θy/θz)coordinated control,dynamic response time<5ms.
Sensing and control:
Fiber laser interferometer:resolution≤0.1pm,anti-environmental vibration interference ratio≥60dB.
AI-driven compensation:a thermal deformation prediction model based on machine learning,with compensation accuracy of≥99.5%.
2.Process adaptability
EUV lithography applications:
Multi-workpiece platform collaboration:supports alternating transmission of dual wafer platforms,reducing exposure waiting time by 25%.
Clean room integration:modular design,single maintenance takes<6 hours.
Special environment adaptation:
Radiation tolerance:Can withstand EUV photon flow density≥10¹⁴photos/cm²·s,surface damage threshold>10¹⁶photos/cm².
Low temperature environment:maintain positioning accuracy within the temperature range of-20℃~80℃.
3.Industry application cases
TSMC’s 3nm process:After the introduction in 2023,the wafer production capacity will increase by 20%,and the yield fluctuation range will drop from±2%to±0.8%.
Samsung GAA transistor manufacturing:used for logic chip production in 2024,with the critical layer alignment error dropping from±1.2μm to±0.6μm.
Intel Packaging Technology:After integration in 2025,the yield of TSV through-holes will increase by 18%.
Technical specifications:ASML 4022.436.72642
Parameters Specification Description
Range of motion:X/Y axis±200mm,Z axis±50mm
Positioning accuracy≤0.5μm(RMS)
Transmission speed:Horizontal movement≥600mm/s,vertical movement≥150mm/s
Load capacity Single wafer bearing≥100kg(including protective cover)
