描述
产品简要说明
ASML 4022.436.87411是ASML High NA EUV光刻机的核心掩模版对准系统，专为3nm及以下先进制程设计。其核心功能包括：
纳米级套刻精度：单次曝光套刻误差（Overlay）≤0.5nm（3σ），关键层对准误差≤0.3nm。
自适应校准算法：实时补偿晶圆形变与热漂移，校准速度≤5ms/次。
多模态传感融合：集成激光干涉、压电传感器与机器视觉，综合精度提升40%。
产品详细说明
1.光学与机械架构
多轴纳米级定位平台：
6自由度运动控制：X/Y/Z轴精度≤0.1nm，旋转轴精度≤0.001弧度。
超低温恒温设计：平台温度波动≤0.005℃，热膨胀系数（CTE）≤0.5ppm/℃。
掩模版支撑系统：
柔性气浮轴承：接触力≤10μN，振动传递率≤0.1%。
自清洁涂层：颗粒污染控制≤0.01缺陷/cm²。
2.智能控制算法
动态校准模型：
机器学习预测：基于历史数据预测晶圆形变趋势，补偿精度≥99.95%。
多物理场耦合仿真：实时计算热应力、机械形变与电磁场干扰影响。
多模态传感融合：
激光干涉仪：分辨率0.01nm，采样频率1MHz。
压电传感器阵列：1000个测点，响应时间≤1μs。
3.环境适应性优化
真空环境兼容：
漏率≤1e-13 Pa·m³/s，氧浓度≤0.0001ppm。
惰性气体循环：氪气纯度≥99.9999%，湿度≤0.001%RH。
抗辐射设计：
多层屏蔽层：X射线吸收率≥99.99%，中子辐射屏蔽效率≥99.9%。
自修复电子电路：单粒子效应（SEU）耐受性提升至10^13 neq/cm²。
技术规格:ASML 4022.436.87411
参数项规格描述
套刻误差（Overlay）≤0.5nm（3σ），关键层≤0.3nm
定位重复性≤0.1nm（X/Y轴）；≤0.0005弧度（旋转轴）
校准速度≤5ms/次（单次校准）
工作环境温度：25℃±0.01℃；洁净度：Class 0（ISO 0级）
Product brief description
ASML 4022.436.87411 is the core mask alignment system of ASML High NA EUV lithography machine,specially designed for advanced processes 3nm and below.Its core functions include:
Nano-scale engraving accuracy:single exposure engraving error(Overlay)≤0.5nm(3σ),key layer alignment error≤0.3nm.
Adaptive calibration algorithm:compensates wafer deformation and thermal drift in real time,and the calibration speed is≤5ms/time.
Multimodal sensing fusion:Integrate laser interference,piezoelectric sensors and machine vision,and improve the overall accuracy by 40%.
Product details
1.Optical and mechanical architecture
Multi-axis nano-level positioning platform:
6-degree of freedom motion control:X/Y/Z axis accuracy≤0.1nm,rotation axis accuracy≤0.001 radians.
Ultra-low temperature constant temperature design:platform temperature fluctuation is≤0.005℃,thermal expansion coefficient(CTE)≤0.5ppm/℃.
Mask support system:
Flexible air-floating bearing:contact force≤10μN,vibration transmission rate≤0.1%.
Self-cleaning coating:Particle pollution control≤0.01 defects/cm².
2.Intelligent control algorithm
Dynamic calibration model:
Machine learning prediction:predict wafer deformation trend based on historical data,with compensation accuracy≥99.95%.
Multi-physics coupled simulation:calculate the impact of thermal stress,mechanical deformation and electromagnetic field interference in real time.
Multimodal sensing fusion:
Laser interferometer:resolution 0.01nm,sampling frequency 1MHz.
Piezoelectric sensor array:1000 measurement points,response time≤1μs.
3.Environmental adaptability optimization
Vacuum environment compatible:
Leakage rate≤1e-13 Pa·m³/s,oxygen concentration≤0.0001ppm.
Inert gas circulation:Krypton gas purity≥99.9999%,humidity≤0.001%RH.
Radiation-resistant design:
Multi-layer shielding layer:X-ray absorption rate≥99.99%,neutron radiation shielding efficiency≥99.9%.
Self-healing electronic circuit:Single-particle effect(SEU)tolerance is increased to 10^13 neq/cm².
Technical specifications:ASML 4022.436.87411
Parameters Specification Description
Overlay error(Overlay)≤0.5nm(3σ),key layer≤0.3nm
Position repeatability≤0.1nm(X/Y axis);≤0.0005 radians(rotation axis)
Calibration speed≤5ms/time(single calibration)
Working environment Temperature:25℃±0.01℃;Cleanliness:Class 0(ISO level 0)
