ASML 4022.470. ASML

1.核心架构设计

模块化集成:

光刻子系统:采用变形光学设计,数值孔径(NA)0.33-0.55,支持单次曝光8nm线宽。

自动化控制单元:配备硬PLC处理器,指令响应延迟≤0.1μs,支持多轴耦合补偿。

环境适应性:

真空环境兼容:操作压力≤1e-12 Pa,温度波动≤0.002℃/min。

洁净度控制:Class 0级洁净度(ISO 0级),颗粒污染≤0.001缺陷/cm²。

2.智能控制算法

动态校准模型:

机器学习预测:基于历史数据预测机械漂移,补偿效率≥99.9%。

多传感器融合:集成激光干涉仪、压电传感器与电容位移计,数据采样率1MHz。

抗干扰机制:

电磁屏蔽层:磁场干扰抑制≥100dB,电场波动≤0.1V/m。

自修复电路:单粒子效应(SEU)耐受性提升至10^15 neq/cm²。

3.应用场景扩展

量子计算:支持77K超低温环境,热导率控制≤0.1 W/m·K。

光子学器件:光学波导阵列耦合误差≤0.05nm,灵敏度达10^-20量级。

技术规格:ASML 4022.470系列

分类: 品牌:

描述

产品简要说明

ASML 4022.470系列是ASML为先进制程半导体制造开发的高精度模块化子系统,涵盖光刻机核心组件、自动化控制单元及激光技术平台。其核心功能包括:

EUV光刻技术集成:支持13.5nm波长光源,分辨率可达8nm,满足3nm及以下制程需求。

亚纳米级控制精度:定位精度≤0.001mm,重复性≤0.0005mm,动态响应时间≤1ms。

高效生产性能:晶圆处理速度达175-200片/小时,生产效率提升30%-50%。

产品详细说明

1.核心架构设计

模块化集成:

光刻子系统:采用变形光学设计,数值孔径(NA)0.33-0.55,支持单次曝光8nm线宽。

自动化控制单元:配备硬PLC处理器,指令响应延迟≤0.1μs,支持多轴耦合补偿。

环境适应性:

真空环境兼容:操作压力≤1e-12 Pa,温度波动≤0.002℃/min。

洁净度控制:Class 0级洁净度(ISO 0级),颗粒污染≤0.001缺陷/cm²。

2.智能控制算法

动态校准模型:

机器学习预测:基于历史数据预测机械漂移,补偿效率≥99.9%。

多传感器融合:集成激光干涉仪、压电传感器与电容位移计,数据采样率1MHz。

抗干扰机制:

电磁屏蔽层:磁场干扰抑制≥100dB,电场波动≤0.1V/m。

自修复电路:单粒子效应(SEU)耐受性提升至10^15 neq/cm²。

3.应用场景扩展

量子计算:支持77K超低温环境,热导率控制≤0.1 W/m·K。

光子学器件:光学波导阵列耦合误差≤0.05nm,灵敏度达10^-20量级。

技术规格:ASML 4022.470系列

参数项规格描述

定位精度≤0.001mm(3σ)

生产效率175-200片/小时

环境适应性温度:25℃±0.005℃;真空度:≤1e-12 Pa

抗辐射能力EUV辐射吸收率≥99.99%,中子屏蔽效率≥99.995%

Product brief description

ASML 4022.470 series is a high-precision modular subsystem developed by ASML for advanced process semiconductor manufacturing,covering core components of lithography machines,automated control units and laser technology platforms.Its core functions include:

EUV lithography technology integration:supports 13.5nm wavelength light source,with a resolution of up to 8nm,meeting process requirements of 3nm and below.

Sub-nanometer control accuracy:positioning accuracy≤0.001mm,repeatability≤0.0005mm,dynamic response time≤1ms.

Efficient production performance:wafer processing speed reaches 175-200 pieces per hour,and production efficiency is increased by 30%-50%.

Product details

1.Core architecture design

Modular integration:

Lithography subsystem:adopts deformation optical design,numerical aperture(NA)0.33-0.55,and supports a single exposure of 8nm line width.

Automation control unit:equipped with a hard PLC processor,instruction response delay≤0.1μs,and supports multi-axis coupling compensation.

Environmental adaptability:

Vacuum environment compatible:operating pressure≤1e-12 Pa,temperature fluctuation≤0.002℃/min.

Cleanliness control:Class level 0 cleanliness(ISO level 0),particle pollution≤0.001 defects/cm².

2.Intelligent control algorithm

Dynamic calibration model:

Machine learning prediction:predict mechanical drift based on historical data,with compensation efficiency≥99.9%.

Multi-sensor fusion:Integrated laser interferometer,piezoelectric sensor and capacitive displacement meter,data sampling rate of 1MHz.

Anti-interference mechanism:

Electromagnetic shielding layer:magnetic field interference suppression≥100dB,electric field fluctuations≤0.1V/m.

Self-healing circuit:Single-particle effect(SEU)tolerance increased to 10^15 neq/cm².

3.Application scenario expansion

Quantum computing:supports 77K ultra-low temperature environment,thermal conductivity control≤0.1 W/m·K.

Photonics devices:The coupling error of optical waveguide array is≤0.05nm,and the sensitivity reaches the order of 10^-20.

Technical Specifications:ASML 4022.470 Series

Parameters Specification Description

Positioning accuracy≤0.001mm(3σ)

Production efficiency 175-200 tablets per hour

Environmental adaptability Temperature:25℃±0.005℃;vacuum:≤1e-12 Pa

Radiation resistance:EUV radiation absorption rate≥99.99%,neutron shielding efficiency≥99.995%