描述
产品简要说明
ASML 4022.470.5367是ASML High NA EUV光刻机的核心光学校准系统，专为3nm及以下先进制程设计。其核心功能包括：
亚纳米级对准精度：光刻机与晶圆对准误差≤0.05nm（3σ），关键层对焦偏移控制≤0.03nm。
实时动态校准：基于深度学习的自适应校准算法，校准周期缩短至≤20分钟。
多光谱兼容性：支持13.5nm EUV波长及红外辅助对准，光谱带宽覆盖≥99.5%。
产品详细说明
1.光学架构设计
六自由度光学平台：
纳米级调整机构：X/Y/Z轴位移精度≤0.03nm，旋转轴精度≤0.0001弧度，倾斜轴精度≤0.00003弧度。
超低温恒温设计：平台温度波动≤0.001℃，热膨胀系数（CTE）≤0.1ppm/℃。
自适应反射镜组：
主动形变控制：通过压电驱动实现镜面曲率实时调整，形变补偿精度≥99.995%。
抗污染镀膜：表面颗粒污染控制≤0.002缺陷/cm²，反射率≥99%（13.5nm波长）。
2.智能校准算法
混合对准模型：
机器视觉+激光干涉：融合光学传感器与深度学习算法，对准速度提升50%。
实时误差预测：基于历史数据预测机械漂移，补偿响应时间≤300μs。
多光谱融合控制：
EUV与红外协同：利用红外标记辅助EUV光路校准，对准误差降低70%。
动态光谱调谐：波长漂移控制≤0.0005nm，光谱纯度≥99.995%。
3.环境适应性优化
极端洁净度设计：
洁净度Class 0（ISO 0级），粒子浓度≤0.0005颗粒/m³（0.1μm粒径）。
自清洁离子风场：表面颗粒沉积速率≤0.00005颗粒/cm²·h。
抗辐射加固：
多层屏蔽层：EUV辐射吸收率≥99.995%，中子辐射屏蔽效率≥99.998%。
自修复电路：单粒子效应（SEU）耐受性提升至10^16 neq/cm²。
技术规格:ASML 4022.470.5367
参数项规格描述
对准精度≤0.05nm（3σ）
校准周期≤20分钟
环境适应性温度：25℃±0.001℃；洁净度：Class 0（ISO 0级）
抗辐射能力EUV辐射吸收率≥99.995%，中子屏蔽效率≥99.998%
Product brief description
ASML 4022.470.5367 is the core optical machining system of ASML High NA EUV lithography machine,designed for advanced processes under 3nm and below.Its core functions include:
Sub-nanometer alignment accuracy:the alignment error between the lithography machine and wafer is≤0.05nm(3σ),and the focus offset control of the key layer is≤0.03nm.
Real-time dynamic calibration:Adaptive calibration algorithm based on deep learning,shortening the calibration cycle to≤20 minutes.
Multispectral compatibility:supports 13.5nm EUV wavelength and infrared assisted alignment,with spectral bandwidth coverage≥99.5%.
Product details
1.Optical architecture design
Six-degree-of-freedom optical platform:
Nano-level adjustment mechanism:X/Y/Z axis displacement accuracy≤0.03nm,rotation axis accuracy≤0.0001 radian,tilt axis accuracy≤0.00003 radian.
Ultra-low temperature constant temperature design:platform temperature fluctuation≤0.001℃,thermal expansion coefficient(CTE)≤0.1ppm/℃.
Adaptive mirror group:
Active deformation control:Real-time adjustment of mirror curvature through piezoelectric driving,with deformation compensation accuracy≥99.995%.
Anti-pollution coating:surface particle pollution control≤0.002 defects/cm²,reflectivity≥99%(13.5nm wavelength).
2.Intelligent calibration algorithm
Hybrid alignment model:
Machine vision+laser interference:Fusion of optical sensors and deep learning algorithms,and the alignment speed is increased by 50%.
Real-time error prediction:predict mechanical drift based on historical data,and the compensation response time is≤300μs.
Multi-spectral fusion control:
EUV and infrared coordination:use infrared marking to assist EUV optical path calibration,and the alignment error is reduced by 70%.
Dynamic spectral tuning:wavelength drift control≤0.0005nm,spectral purity≥99.995%.
3.Environmental adaptability optimization
Extreme cleanliness design:
Cleanliness Class 0(ISO level 0),particle concentration≤0.0005 particles/m³(0.1μm particle size).
Self-cleaning ionic wind field:surface particle deposition rate≤0.00005 particles/cm²·h.
Radiation-resistant reinforcement:
Multi-layer shielding layer:EUV radiation absorption rate≥99.995%,neutron radiation shielding efficiency≥99.998%.
Self-healing circuit:Single-particle effect(SEU)tolerance is increased to 10^16 neq/cm².
Technical specifications:ASML 4022.470.5367
Parameters Specification Description
Alignment accuracy≤0.05nm(3σ)
Calibration cycle≤20 minutes
Environmental adaptability Temperature:25℃±0.001℃;Cleanliness:Class 0(ISO level 0)
Radiation resistance:EUV radiation absorption rate≥99.995%,neutron shielding efficiency≥99.998%
