描述
产品简要说明
ASML 4022.472.58471激光盒是ASML专为极紫外（EUV）光刻机设计的高功率激光稳定传输系统，核心特性包括：
多光谱激光整合：支持13.5nm极紫外光与可见光复合传输，光束稳定性误差≤0.1%。
主动温控系统：采用双循环冷却设计，激光器工作温度波动≤±0.05℃。
抗污染防护：Class 1洁净室认证，表面粗糙度Ra≤0.1nm，ESD防护等级15kV。
产品详细说明
1.技术架构与核心功能
光学传输路径：
集成自由曲面反射镜与多层膜镀膜技术，反射率≥95%（13.5nm波段）。
可调谐光栅模块支持波长范围13.3～13.7nm动态切换。
热管理模块：
液态金属冷却系统（镓-铟-锡合金），热导率≥40W/(m·K)，响应时间<50ms。
热电制冷（TEC）阵列实现局部温控，温度梯度控制精度±0.02℃。
安全防护设计：
应急光束终止器（EBT）在0.1秒内吸收99.9%光能。
双冗余激光功率监测（PM）系统，精度±0.5%。
2.性能突破
光束质量：
M²因子≤1.05，光束发散角<0.5mrad（全功率模式）。
环境适应性：
抗振动设计：在0.1～100Hz频段内位移振幅≤5nm。
能效比：
激光转换效率≥35%，综合能耗降低40%（对比传统CO₂激光盒）。
技术规格:ASML 4022.472.58471
参数项规格描述
工作波长13.5nm（主波段），可见光辅助校准波段（633nm）
激光功率100W（EUV），5W（可见光）
光束直径10mm（EUV），5mm（可见光）
温度控制主动温控范围15～35℃，波动≤±0.05℃
防护等级IP69K（防尘防水），Class 1洁净室认证
接口类型Camera Link HS Gen3（带宽≥20Gbps）
核心价值与性能亮点
1.多模态协同工作
复合光谱传输：EUV与可见光同步传输，实现晶圆实时定位与缺陷检测一体化。
动态功率调节：支持0.1W～100W无级调节，满足不同制程需求（如5nm/3nm/2nm）。
2.极端环境可靠性
真空兼容性：耐受<1e-6 mbar真空环境，材料应力变化≤0.01%。
抗辐射设计：抗伽马射线辐射剂量≥100kGy（符合半导体制造标准）。
3.全生命周期优化
自诊断系统：内置振动传感器与光谱分析模块，故障预测准确率≥98%。
模块化维护：反射镜与冷却单元可独立更换，维修时间缩短至4小时以内。
Product brief description
ASML 4022.472.58471 Laser Box is a high-power laser stable transmission system designed by ASML for extreme ultraviolet(EUV)lithography machines.The core features include:
Multi-spectral laser integration:supports the composite transmission of 13.5nm extreme ultraviolet light and visible light,with beam stability error≤0.1%.
Active temperature control system:adopts dual circulation cooling design,and the laser operating temperature fluctuates≤±0.05℃.
Anti-pollution protection:Class 1 clean room certification,surface roughness Ra≤0.1nm,ESD protection level 15kV.
Product details
1.Technical architecture and core functions
Optical transmission path:
Integrated free-surface mirror and multi-layer film coating technology,reflectivity≥95%(13.5nm band).
The tunable grating module supports dynamic switching between wavelength range 13.3 and 13.7nm.
Thermal management module:
Liquid metal cooling system(gallium-indium-tin alloy),thermal conductivity≥40W/(m·K),response time<50ms.
Thermoelectric cooling(TEC)array realizes local temperature control,and the temperature gradient control accuracy is±0.02℃.
Safety protection design:
The emergency beam terminator(EBT)absorbs 99.9%of the light energy in 0.1 second.
Dual redundant laser power monitoring(PM)system,accuracy±0.5%.
2.Performance breakthrough
Beam quality:
M²factor≤1.05,beam divergence angle<0.5mrad(full power mode).
Environmental adaptability:
Vibration resistance design:Displacement amplitude in the frequency band 0.1~100Hz is≤5nm.
Energy efficiency ratio:
The laser conversion efficiency is≥35%,and the overall energy consumption is reduced by 40%(compared with traditional CO₂laser boxes).
Technical specifications:ASML 4022.472.58471
Parameters Specification Description
Operating wavelength:13.5nm(main band),visible light assisted calibration band(633nm)
Laser power:100W(EUV),5W(visible light)
Beam diameter:10mm(EUV),5mm(visible light)
Temperature control Active temperature control range 15~35℃,fluctuation≤±0.05℃
Protection level IP69K(dust-proof and waterproof),Class 1 Clean Room Certification
Interface type Camera Link HS Gen3(bandwidth≥20Gbps)
Core Valuesand Performance Highlights
1.Multimodal collaborative work
Compound spectral transmission:EUV and visible light are transmitted simultaneously to realize the integration of real-time wafer positioning and defect detection.
Dynamic power adjustment:supports stepless adjustment of 0.1W~100W to meet different process requirements(such as 5nm/3nm/2nm).
2.Extreme environmental reliability
Vacuum compatibility:Tolerate<1e-6 mbar vacuum environment,material stress change≤0.01%.
Radiation-resistant design:anti-gamma ray radiation dose≥100kGy(compliant with semiconductor manufacturing standards).
3.Full life cycle optimization
Self-diagnosis system:built-in vibration sensor and spectral analysis module,fault prediction accuracy≥98%.
Modular maintenance:The reflector and cooling unit can be replaced independently,and the maintenance time is shortened to less than 4 hours.
