描述
产品简要说明
ASML 859-0942-005 B是一款专为浸润式光刻机设计的高精度PCB控制模块，核心功能包括：
亚纳米级定位控制：支持光刻机晶圆台位移精度≤0.1nm，重复定位精度≤0.05nm。
多轴协同驱动：集成X/Y/Z三轴压电陶瓷驱动器（分辨率0.01nm），同步误差≤10nm。
抗干扰设计：通过ASML电磁兼容性认证（EMC Class 5），抗外部电磁干扰能力达80V/m。
产品详细说明
1.技术架构与创新
分布式控制架构：
多核协同处理：采用双ARM Cortex-A72（主频1.5GHz）+Xilinx Kintex UltraScale+FPGA，分别负责运动控制与数据处理。
硬件加速单元：内置专用运动控制器，定位响应速度提升25%。
通信协议栈：
EtherCAT主站：支持动态从站配置，节点间同步误差≤30ns。
ASML私有协议：兼容光刻机工艺参数库（包含600+定位工艺包）的实时加载。
2.核心功能模块
光刻机晶圆台控制：
动态补偿算法：基于有限元分析的实时补偿算法，热漂移补偿精度达0.03nm。
纯度保障机制：集成激光诱导击穿光谱（LIBS）检测，晶圆台表面污染物浓度控制≤10^10 atoms/cm²。
安全控制机制：
双冗余设计：主控板与安全模块独立运行，故障切换时间<2ms。
紧急制动系统：支持ASML安全等级（ASML Safety Level 7），晶圆台超限响应时间≤80ms。
3.行业应用适配性
浸润式光刻机：
晶圆台定位：驱动压电陶瓷驱动器实现±10nm位移调节，定位均匀性波动≤0.02nm。
洁净室兼容性：通过ISO 14644-1 Class 1洁净室认证，微粒捕获效率≥99.99999%。
精密制造设备：
多轴协同控制：同步管理X/Y/Z三轴运动，协同误差≤5nm。
温度补偿：集成热敏电阻阵列，实时补偿环境温度变化（补偿范围-5℃至5℃）。
技术规格:ASML 859-0942-005 B
参数项规格描述
控制轴数3轴（X/Y/Z），可扩展至6轴（需外接扩展模块）
通信协议EtherCAT、ASML-IPC、Profinet IRT
主站刷新周期≤50μs（EtherCAT）
工作温度20℃±0.5℃（恒温控制模式）
Product brief description
ASML 859-0942-005 B is a high-precision PCB control module designed for immersive lithography machines.The core functions include:
Sub-nano-level positioning control:supports the displacement accuracy of the wafer table of the lithography machine≤0.1nm,and the repeat positioning accuracy is≤0.05nm.
Multi-axis collaborative drive:integrated X/Y/Z three-axis piezoelectric ceramic driver(resolution 0.01nm),synchronization error≤10nm.
Anti-interference design:Passed ASML electromagnetic compatibility certification(EMC Class 5),with an anti-external electromagnetic interference capability of 80V/m.
Product details
1.Technical Architecture and Innovation
Distributed control architecture:
Multi-core collaborative processing:Dual ARM Cortex-A72(main frequency 1.5GHz)+Xilinx Kintex UltraScale+FPGA are used,which are responsible for motion control and data processing respectively.
Hardware acceleration unit:built-in dedicated motion controller,positioning response speed is increased by 25%.
Communication protocol stack:
EtherCAT master:supports dynamic slave configuration,and the synchronization error between nodes is≤30ns.
ASML private protocol:compatible with the real-time loading of the lithography machine process parameter library(including 600+positioning process packages).
2.Core functional modules
Lithography machine wafer stage control:
Dynamic compensation algorithm:Real-time compensation algorithm based on finite element analysis,the thermal drift compensation accuracy reaches 0.03nm.
Purity assurance mechanism:Integrated laser induced breakdown spectroscopy(LIBS)detection,wafer surface contaminant concentration control≤10^10 atoms/cm².
Safety control mechanism:
Dual redundant design:the main control board and the security module operate independently,and the failover time is<2ms.
Emergency braking system:supports ASML safety level(ASML Safety Level 7),wafer platform over-limit response time≤80ms.
3.Industry application adaptability
Immersive lithography machine:
Wafer table positioning:Drive the piezoelectric ceramic driver to achieve±10nm displacement adjustment,and the positioning uniformity fluctuates≤0.02nm.
Clean room compatibility:Passed ISO 14644-1 Class 1 clean room certification,particle capture efficiency≥99.99999%.
Precision manufacturing equipment:
Multi-axis collaborative control:synchronously manages X/Y/Z three-axis motion,with a synergistic error of≤5nm.
Temperature compensation:Integrated thermistor array,compensates for ambient temperature changes in real time(compensation range-5℃to 5℃).
Technical Specifications:ASML 859-0942-005 B
Parameters Specification Description
Number of control axes:3 axes(X/Y/Z),can be expanded to 6 axes(external expansion module required)
Communication Protocols EtherCAT,ASML-IPC,Profinet IRT
Main site refresh cycle≤50μs(EtherCAT)
Working temperature:20℃±0.5℃(constant temperature control mode)
