描述
产品简要说明
ASML 859-8218-002Q是ASML专为极紫外（EUV）光刻机设计的高频多层印刷电路板（PCB），核心特性包括：
12层HDI叠层结构：支持10GHz信号传输，插入损耗≤0.2dB。
纳米级运动控制适配：兼容High-NA EUV光刻机的双工件台同步定位需求。
洁净室级可靠性：通过Class 1洁净室认证，抗静电等级ESD 8kV。
产品详细说明
1.技术架构与核心功能
高频信号传输：
采用聚酰亚胺（PI）与低损耗陶瓷复合基材，支持10GHz高频信号传输，插入损耗≤0.2dB（1GHz～10GHz）。
集成阻抗匹配网络与滤波器，信号完整性（S参数）误差<±1.5%。
运动控制适配：
支持双工件台（晶圆台/掩模台）的纳米级同步定位控制，时序精度达±50ps。
集成运动补偿算法接口，兼容ASML的Real-time Positioning（RTP）系统。
抗干扰设计：
多层屏蔽层（含铜箔与氮化钛涂层），电磁屏蔽效能达60dB（100MHz～1GHz）。
采用差分信号传输技术，共模抑制比（CMRR）>80dB。
2.性能突破
制程兼容性：
支持3nm及以下逻辑芯片与2nm存储芯片的曝光控制需求。
环境适应性：
温度范围-40℃～125℃，热膨胀系数（CTE）与光刻机基材匹配（50ppm/℃）。
抗湿性等级IP68（水下1米浸泡24小时）。
能效优化：
采用动态电源管理技术，待机功耗≤1W，整体能效提升40%。
技术规格:ASML 859-8218-002Q
参数项规格描述
层数12层HDI叠层
基材类型聚酰亚胺（PI）与陶瓷复合材料
信号传输频率10GHz（插入损耗≤0.2dB）
尺寸范围定制化（最小尺寸：60mm×60mm）
工作温度-40℃～100℃
抗静电等级ESD 8kV（人体模型）
功耗≤12W（典型值）
Product brief description
ASML 859-8218-002Q is a high-frequency multi-layer printed circuit board(PCB)designed by ASML for extreme ultraviolet(EUV)lithography machines.The core features include:
12-layer HDI stacked structure:supports 10GHz signal transmission,insertion loss≤0.2dB.
Nano-level motion control adaptation:compatible with the synchronous positioning requirements of dual workpiece tables of High-NA EUV lithography machines.
Clean room-level reliability:passed Class 1 clean room certification,antistatic grade ESD 8kV.
Product details
1.Technical architecture and core functions
High frequency signal transmission:
Polyimide(PI)and low-loss ceramic composite substrate are used to support 10GHz high-frequency signal transmission,and the insertion loss is≤0.2dB(1GHz~10GHz).
Integrated impedance matching network and filter,signal integrity(S parameter)error<±1.5%.
Motion control adaptation:
Supports nano-level synchronous positioning control of dual workpiece tables(wafer tables/mask tables),with timing accuracy up to±50ps.
Integrated motion compensation algorithm interface,compatible with ASML’s Real-time Positioning(RTP)system.
Anti-interference design:
Multi-layer shielding layer(including copper foil and titanium nitride coating),electromagnetic shielding effect reaches 60dB(100MHz~1GHz).
Differential signal transmission technology is adopted,common mode rejection ratio(CMRR)>80dB.
2.Performance breakthrough
Process compatibility:
Supports exposure control requirements for logic chips below 3nm and 2nm memory chips.
Environmental adaptability:
The temperature range is-40℃~125℃,and the coefficient of thermal expansion(CTE)matches the lithography machine substrate(50ppm/℃).
Wet resistance grade IP68(soak 1 meter under water for 24 hours).
Energy efficiency optimization:
Dynamic power management technology is adopted,standby power consumption is≤1W,and the overall energy efficiency is improved by 40%.
Technical specifications:ASML 859-8218-002Q
Parameter specification description
12 layers HDI stack
Base material type polyimide(PI)and ceramic composite materials
Signal transmission frequency 10GHz(insert loss≤0.2dB)
Customized size range(minimum size:60mm×60mm)
Working temperature-40℃~100℃
Antistatic grade ESD 8kV(manner model)
Power consumption≤12W(typical)
