描述
1.产品定位与分类推测
LAM 685-069171-100的命名结构符合Lam Research（全球领先半导体设备制造商）的部件编码规则，为以下类型之一：
气体分配盘（Gas Distribution Plate,GDP）：用于化学气相沉积（CVD）或蚀刻设备，均匀分配工艺气体至晶圆表面。
射频（RF）匹配器组件：如匹配网络中的电容、电感模块，用于调节等离子体生成功率。
真空腔室部件：如聚焦环（Focus Ring）、屏蔽环（Shield Ring），保护腔室内壁并优化等离子体分布。
传感器或执行器：如压力传感器、质量流量控制器（MFC）的替换模块。
2.1若为气体分配盘（GDP）
参数项可能规格
适用设备Lam Research Kiyo™或Vector™系列蚀刻机（用于28nm/14nm/7nm工艺节点）
材质铝合金（阳极氧化）或316L不锈钢（耐等离子体腐蚀，表面粗糙度Ra≤0.1μm）
气体通道多孔结构（如100~500个微孔），孔径0.1~0.5mm（确保气体均匀性±2%）
温度范围-50℃~+200℃（支持低温蚀刻或高温沉积工艺）
兼容性符合SEMI标准接口（如VCR®或Swagelok®接头，泄漏率<1×10⁻⁹mbar·L/s）
2.2若为射频匹配器组件
参数项可能规格
频率范围2~100 MHz（覆盖等离子体生成常用频段）
功率容量1~5 kW（支持高密度等离子体蚀刻）
匹配精度VSWR≤1.5:1（电压驻波比，确保功率高效传输）
冷却方式水冷或风冷（温度控制精度±1℃，防止热漂移）
接口类型N型或2.92mm射频连接器（低损耗，适用于高频信号传输）
1.Product Positioning and Classification
The naming structure of the LAM 685-069171-100 conforms to the part numbering conventions of Lam Research(a leading global semiconductor equipment manufacturer)and is one of the following types:
Gas Distribution Plate(GDP):Used in chemical vapor deposition(CVD)or etching equipment to evenly distribute process gases across the wafer surface.
RF Matching Components:Such as capacitor and inductor modules in matching networks,used to regulate plasma power.
Vacuum Chamber Components:Such as focus rings and shield rings,which protect the chamber walls and optimize plasma distribution.
Sensors or Actuators:Such as pressure sensors and replacement modules for mass flow controllers(MFCs).2.1 Gas Distribution Plate(GDP)
Parameters:Possible Specifications
Applicable Equipment:Lam Research Kiyo™or Vector™series etchers(for 28nm/14nm/7nm process nodes)
Material:Aluminum alloy(anodized)or 316L stainless steel(plasma-resistant,surface roughness Ra≤0.1μm)
Gas Channels:Multi-porous structure(e.g.,100–500 micropores),pore diameter 0.1–0.5mm(ensure gas uniformity±2%)
Temperature Range:-50°C–+200°C(supports low-temperature etching or high-temperature deposition processes)
Compatibility:SEMI-standard interfaces(e.g.,VCR®or Swagelok®connectors,leak rate<1×10⁻⁹mbar·L/s)
2.2 RF Matching Components
Parameters:Possible Specifications
Frequency Range:2–100 MHz(covers the common frequency band for plasma generation)
Power Capacity:1–5 kW(supports High-density plasma etching)
Matching accuracy:VSWR≤1.5:1(voltage standing wave ratio,ensuring efficient power transmission)
Cooling:Water or air cooling(temperature control accuracy±1°C to prevent thermal drift)
Interface:N-type or 2.92mm RF connector(low loss,suitable for high-frequency signal transmission)
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