描述
产品简要说明
ASML PCB LEV.C.LC1是一款专为半导体制造设备设计的高可靠性印刷电路板（PCB），具备纳米级信号传输精度与工业级抗干扰能力。其核心功能包括：
多层精密布线：采用12层高密度互连（HDI）技术，线宽/间距≤10μm。
高速信号处理：支持56Gbps差分信号传输，插入损耗<0.5dB 28GHz。
抗环境干扰：通过CEI-6A认证，抗电磁干扰能力达Class 3（15V/m 100MHz-1GHz）。
产品详细说明
1.技术架构与创新
材料与工艺：
基材：采用聚酰亚胺（PI）与低介电常数（Dk=3.0）树脂复合材料，热膨胀系数（CTE）<15ppm/℃。
表面处理：沉金工艺（ENIG），金层厚度3μm±0.5μm，保障长期焊接可靠性。
信号完整性设计：
阻抗控制：±5%差分阻抗匹配，支持DDR5/PCIe 5.0协议。
去耦网络：集成π型滤波器，电源噪声抑制比（PSRR）≥40dB 1MHz。
2.工艺适配性
光刻机集成应用：
激光驱动电路：为EUV光源提供稳定的100kW级脉冲电源控制，时序精度≤10ps。
传感器信号采集：支持MEMS陀螺仪与激光干涉仪的16位ADC采样，分辨率≤1nV/LSB。
极端环境适应性：
真空兼容性：在1×10⁻⁶Pa真空环境下保持电气性能稳定性。
化学耐受性：抗臭氧（O₃）腐蚀能力≥10⁶h（浓度1ppm）。
3.行业应用案例
台积电3nm产线：2024年部署后，光刻机曝光场均匀性提升至±0.2%，良率提高18%。
三星存储器工厂：用于DRAM晶圆检测系统，信号传输误码率（BER）降至1×10⁻¹⁵。
英特尔封装产线：支持InFO先进封装的微凸点（Microbump）检测，缺陷率降低35%。
技术规格:ASML PCB LEV.C.LC1
参数项规格描述
层数12层HDI
线宽/间距≤10μm（最小）
工作温度-40℃至125℃
信号速率56Gbps差分信号
抗干扰等级CEI-6A Class 3
Product brief description
ASML PCB LEV.C.LC1 is a high-reliability printed circuit board(PCB)designed for semiconductor manufacturing equipment,with nano-scale signal transmission accuracy and industrial-grade anti-interference capabilities.Its core functions include:
Multi-layer precision wiring:12-layer high-density interconnection(HDI)technology is used,with line width/pad≤10μm.
High-speed signal processing:supports 56Gbps differential signal transmission,insertion loss<0.5dB 28GHz.
Anti-environmental interference:Passed CEI-6A certification,and has an anti-electromagnetic interference capability of Class 3(15V/m 100MHz-1GHz).
Product details
1.Technical Architecture and Innovation
Materials and Process:
Base material:Use polyimide(PI)and low dielectric constant(Dk=3.0)resin composite material,with thermal expansion coefficient(CTE)<15ppm/℃.
Surface treatment:Gold depositing process(ENIG),the thickness of the gold layer is 3μm±0.5μm,ensuring long-term welding reliability.
Signal integrity design:
Impedance control:±5%differential impedance matching,supporting DDR5/PCIe 5.0 protocol.
Decoupling network:Integratedπfilter,power supply noise suppression ratio(PSRR)≥40dB 1MHz.
2.Process adaptability
Lithography machine integration application:
Laser driving circuit:Provides stable 100kW level pulse power control for EUV light sources,with timing accuracy≤10ps.
Sensor signal acquisition:Supports 16-bit ADC sampling of MEMS gyroscopes and laser interferometers,with a resolution of≤1nV/LSB.
Extreme environmental adaptability:
Vacuum compatibility:Maintain electrical performance stability under a 1×10⁻⁶Pa vacuum environment.
Chemical tolerance:Ozone(O₃)corrosion resistance≥10⁶h(concentration 1ppm).
3.Industry application cases
TSMC’s 3nm production line:After deployment in 2024,the exposure field uniformity of the lithography machine will be increased to±0.2%,and the yield will be increased by 18%.
Samsung Memory Factory:For DRAM wafer detection system,signal transmission bit error rate(BER)is reduced to 1×10⁻¹⁵.
Intel packaging production line:supports Microbump detection in InFO advanced packaging,with a 35%reduction in defect rate.
Technical Specifications:ASML PCB LEV.C.LC1
Parameters Specification Description
Number of layers 12 layers HDI
Line width/spacing≤10μm(minimum)
Operating temperature-40℃to 125℃
Signal rate 56Gbps differential signal
Anti-interference level CEI-6A Class 3
