SEC PB4-DY01 其他

写:最高2,000 MB/s(SAS接口理论峰值,实际性能受RAID配置影响)

随机读写IOPS 4K随机读:500,000 IOPS

4K随机写:100,000 IOPS(典型值,QD32深度队列下测试)

延迟时间读延迟:<90μs

写延迟:<15μs(低延迟特性支持实时业务)

功耗空闲状态:5W

典型工作状态:12W

最大工作状态:18W

噪音水平0dB(无机械部件,完全静音)

3.可靠性参数

参数类别规格详情

MTBF 200万小时(按25℃环境温度计算)

年故障率(AFR)0.44%(即99.56%年可靠性)

耐久性(TBW)3.84TB型号:7,680TBW

7.68TB型号:15,360TBW

15.36TB型号:30,720TBW

30.72TB型号:71,680TBW(5年质保期内)

抗震性工作状态:20G(2ms半正弦脉冲)

非工作状态:1,500G(0.5ms半正弦脉冲)

工作温度0℃~70℃(推荐25℃±10℃)

存储温度-40℃~85℃

4.认证与标准

认证类型详情

安全认证UL,cUL,TUV,CE,FCC,KC

环保认证RoHS,WEEE,REACH(符合欧盟环保指令)

行业合规SAS-4标准兼容

NVMe over Fabrics(NoF)支持(需配合NVMe-oF交换机)

分类: 品牌:

描述

一、产品定位与核心优势

1.品牌与产品线归属

三星(Samsung):

全球领先的半导体存储解决方案提供商,SSD产品覆盖消费级(如980 PRO)、企业级(如PM1643、PB4-DY01)等多个系列。

PB4-DY01属于三星企业级SSD高端产品线,定位数据中心级存储,主打大容量、高耐久性、低功耗,适用于7×24小时不间断运行环境。

2.核心优势

超大容量:

单盘容量最高可达30.72TB(采用三星第六代V-NAND 3D TLC闪存技术),支持横向扩展存储系统容量,减少机柜空间占用。

高耐久性:

DWPD(每日全盘写入次数)达1.3(即每天可完整写入盘内数据1.3次),5年质保期内总写入量(TBW)高达71,680TB,满足数据库、日志分析等高写入负载场景需求。

低延迟与高IOPS:

4K随机读IOPS高达500,000,4K随机写IOPS达100,000,支持高并发交易处理(如金融系统、电商订单系统)。

数据安全与可靠性:

支持AES 256位硬件加密、TCG Opal 2.0安全标准,防止数据泄露;采用断电保护(PLP)技术,避免意外断电导致数据丢失。

能效优化:

功耗低于12W(典型工作状态),相比传统HDD可降低80%能耗,助力绿色数据中心建设。

3.典型应用场景

数据中心存储阵列:

作为SAN(存储区域网络)、NAS(网络附属存储)的核心组件,支撑ERP、CRM、大数据分析等关键业务系统。

云计算与虚拟化:

用于虚拟机(VM)存储池,提供稳定的低延迟I/O性能,提升虚拟桌面基础设施(VDI)用户体验。

高性能计算(HPC):

支持科学模拟、基因测序、AI训练等对带宽和IOPS要求极高的计算任务。

内容分发网络(CDN):

存储热门视频、软件更新包等静态内容,通过高速随机读取加速用户访问响应。

二、技术参数详解

1.基础规格

参数类别规格详情

型号SEC PB4-DY01

系列三星PM1643a企业级SSD系列(PB4-DY01为具体型号代码)

接口类型12Gb/s SAS(双端口,支持全双工传输)

容量3.84TB/7.68TB/15.36TB/30.72TB(可选)

闪存类型三星第六代V-NAND 3D TLC(层数达176层,单芯片容量1Tb)

控制器三星Phoenix控制器(8通道,支持NVMe 1.3协议(可选SAS接口))

缓存2GB DDR4 DRAM缓存(加速数据读写,提升随机性能)

物理尺寸2.5英寸SFF(Small Form Factor)

重量约100g

2.性能参数

参数类别规格详情

顺序读写速度读:最高3,100 MB/s

写:最高2,000 MB/s(SAS接口理论峰值,实际性能受RAID配置影响)

随机读写IOPS 4K随机读:500,000 IOPS

4K随机写:100,000 IOPS(典型值,QD32深度队列下测试)

延迟时间读延迟:<90μs

写延迟:<15μs(低延迟特性支持实时业务)

功耗空闲状态:5W

典型工作状态:12W

最大工作状态:18W

噪音水平0dB(无机械部件,完全静音)

3.可靠性参数

参数类别规格详情

MTBF 200万小时(按25℃环境温度计算)

年故障率(AFR)0.44%(即99.56%年可靠性)

耐久性(TBW)3.84TB型号:7,680TBW

7.68TB型号:15,360TBW

15.36TB型号:30,720TBW

30.72TB型号:71,680TBW(5年质保期内)

抗震性工作状态:20G(2ms半正弦脉冲)

非工作状态:1,500G(0.5ms半正弦脉冲)

工作温度0℃~70℃(推荐25℃±10℃)

存储温度-40℃~85℃

4.认证与标准

认证类型详情

安全认证UL,cUL,TUV,CE,FCC,KC

环保认证RoHS,WEEE,REACH(符合欧盟环保指令)

行业合规SAS-4标准兼容

NVMe over Fabrics(NoF)支持(需配合NVMe-oF交换机)

三、功能特性解析

1.三星第六代V-NAND 3D TLC闪存

技术原理:

采用176层3D堆叠技术,通过垂直堆叠存储单元提升单芯片容量(1Tb/芯片),同时降低单位比特成本。

TLC(三层单元)设计在成本、性能、耐久性之间取得平衡,适合企业级读写混合负载。

优势:

高密度存储:单盘容量可达30.72TB,减少机柜空间占用和布线复杂度。

低功耗:相比MLC(多层单元)闪存,TLC闪存的工作电压更低,可延长SSD使用寿命。

1.Product positioning and core advantages

1.Brand and product line

Samsung:

A global leading semiconductor storage solution provider,its SSD products cover multiple series including consumer-grade(such as 980 PRO)and enterprise-grade(such as PM1643,PB4-DY01).

PB4-DY01 belongs to Samsung’s high-end enterprise SSD product line,positioned as data center-grade storage,featuring large capacity,high durability,and low power consumption,suitable for 7×24 hours uninterrupted operation environment.

2.Core advantages

Ultra-large capacity:

The single-disk capacity can reach up to 30.72TB(using Samsung’s sixth-generation V-NAND 3D TLC flash memory technology),supporting horizontal expansion of storage system capacity and reducing cabinet space occupation.

High durability:

DWPD(full disk write times per day)reaches 1.3(that is,the disk data can be fully written 1.3 times a day),and the total write volume(TBW)within the 5-year warranty period is up to 71,680TB,meeting the needs of high write load scenarios such as databases and log analysis.

Low latency and high IOPS:

4K random read IOPS is up to 500,000,4K random write IOPS is up to 100,000,supporting high concurrent transaction processing(such as financial systems,e-commerce order systems).

Data security and reliability:

Supports AES 256-bit hardware encryption and TCG Opal 2.0 security standards to prevent data leakage;adopts power loss protection(PLP)technology to avoid data loss caused by accidental power failure.

Energy efficiency optimization:

Power consumption is less than 12W(typical working state),which can reduce energy consumption by 80%compared with traditional HDDs,helping to build green data centers.

3.Typical application scenarios

Data center storage array:

As the core component of SAN(storage area network)and NAS(network attached storage),it supports key business systems such as ERP,CRM,and big data analysis.

Cloud computing and virtualization:

Used for virtual machine(VM)storage pool,providing stable low-latency I/O performance and improving the user experience of virtual desktop infrastructure(VDI).

High performance computing(HPC):

Supports computing tasks with extremely high bandwidth and IOPS requirements such as scientific simulation,gene sequencing,and AI training.

Content distribution network(CDN):

Stores static content such as popular videos and software update packages,and accelerates user access response through high-speed random reading.

2.Detailed explanation of technical parameters

1.Basic specifications

Parameter category Specification details

Model SEC PB4-DY01

Series Samsung PM1643a Enterprise SSD Series(PB4-DY01 is the specific model code)

Interface type 12Gb/s SAS(dual port,support full-duplex transmission)

Capacity 3.84TB/7.68TB/15.36TB/30.72TB(optional)

Flash memory type Samsung sixth-generation V-NAND 3D TLC(176 layers,single chip capacity 1Tb)

Controller Samsung Phoenix controller(8 channels,support NVMe 1.3 protocol(optional SAS interface))

Cache 2GB DDR4 DRAM cache(accelerates data reading and writing,improves random performance)

Physical size 2.5-inch SFF(Small Form Factor)

Weight About 100g

2.Performance parameters

Parameter category Specification details

Sequential read and write speed Read:up to 3,100 MB/s

Write:up to 2,000 MB/s(SAS interface theoretical peak,actual performance is affected by RAID configuration)

Random read and write IOPS 4K random read:500,000 IOPS

4K random write:100,000 IOPS(typical value,tested under QD32 deep queue)

Latency Read latency:<90μs

Write latency:<15μs(low latency feature supports real-time business)

Power consumption Idle state:5W

Typical working state:12W

Maximum working state:18W

Noise level 0dB(no mechanical parts,completely silent)

3.Reliability parameters

Parameter category Specification details

MTBF 2 million hours(calculated at 25℃ambient temperature)

Annual failure rate(AFR)0.44%(i.e.99.56%)Years of reliability)

Endurance(TBW)3.84TB model:7,680TBW

7.68TB model:15,360TBW

15.36TB model:30,720TBW

30.72TB model:71,680TBW(within 5-year warranty)

Vibration resistance Working state:20G(2ms half-sine pulse)

Non-working state:1,500G(0.5ms half-sine pulse)

Working temperature 0℃~70℃(recommended 25℃±10℃)

Storage temperature-40℃~85℃

4.Certifications and standards

Certification type Details

Safety certification UL,cUL,TUV,CE,FCC,KC

Environmental certification RoHS,WEEE,REACH(comply with EU environmental directives)

Industry compliance SAS-4 standard compatible

NVMe over Fabrics(NoF)support(need to cooperate NVMe-oF switch)

III.Functional characteristics analysis

1.Samsung’s sixth-generation V-NAND 3D TLC flash memory

Technical principle:

Using 176-layer 3D stacking technology,the single-chip capacity(1Tb/chip)is increased by vertically stacking storage units,while reducing the unit bit cost.

TLC(three-layer cell)design strikes a balance between cost,performance,and durability,suitable for enterprise-level read-write mixed loads.

Advantages:

High-density storage:The capacity of a single disk can reach 30.72TB,reducing cabinet space occupation and wiring complexity.

Low power consumption:Compared with MLC(multi-layer cell)flash memory,TLC flash memory has a lower operating voltage,which can extend the service life of SSD.

ABB Model: GBU72 3BHE055094R0002 Model: 3BHE055094R0002 GBU72 Model: GBU72 Model: 3BHE055094R0002 Model: 3BHE031197R0001 Model: 3BHB030310R0001 Model: 73BHE055094R0002 GBU72 Model: 73BHE055094R0002 Model: GBU72 Model: ABB PCS6000 PRODUCT FAMLIY ABB 5SHY4045L0006 3BHB030310R0001 3BHE039203R0101 GVC736CE101